Wafer planarization using a uniform layer of material and method for forming uniform layer of material used in semiconductor processing

A method of forming a layer of material for use in forming a flat on a semiconductor, the material having first and second major surfaces which are substantially parallel to one another and substantially flat, the method comprising:

• introducing material for forming the layer of material into an open central region of a shim, wherein the shim has a plurality of inwardly extending, spaced-apart projections circumscribing the open central region with material receiving recesses defined between adjacent projections;
• and
• pressing the material between first and second flat pressing surfaces to form the layer of material;
• wherein the projections limit the extent to which the first and second flat pressing surfaces approach one another to thereby define the thickness of the layer of material.

A method of forming a layer of material for use in forming a flat on a semiconductor, the material having first and second major surfaces which are substantially parallel to one another and substantially flat, the method comprising:

• introducing material to be formed into an open central region of a shim;
• heating the material to a temperature below the melting point of the material;
• and
• pressing the material between first and second flat pressing surfaces to form the layer of material when the material is heated to a temperature at which the material flows but remains below the melting point of the material;
• wherein the shim is interposed between the first and second flat pressing surfaces, the shim being configured to limit the extent to which the first and second flat pressing surfaces approach one another to thereby define the thickness of the layer of material.

A method of forming a layer of material for use in forming a flat on a semiconductor, the material having first and second major surfaces which are substantially parallel to one another and substantially flat, the method comprising:

• heating the material to be formed into the layer at a temperature below the melting point of the material for a period of time until the temperature throughout the material is substantially uniform;
• disposing a shim at least partially between first and second optical flats, the shim having a region for receiving the material;
• and
• pressing the material in the shim by pressing the first and second optical flats toward one another, the shim being configured to limit the extent the first and second optical flats approach one another to thereby define the thickness of the layer of material.