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US 6,656,313 B2Granted
Structure and method for improved adhesion between two polymer films
AssigneeInternational Business Machines Corporation
InventorsFrank D. Egitto, Luis J. Matienzo
Life of this patent
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Abstract
A method for improving the adhesion between polyimide layers and the structure formed by the method. A silicon oxide-containing layer is formed on the surface of a polyimide layer and a second layer of polyimide is formed on the silicon oxide-containing layer.
Claims25
A method comprising the steps of:
- (a) forming a doped layer over a substrate, the doped layer comprising a mixture of (1) an organo-silicon compound and (2) either a first polymeric material or a first precursor composition that can be converted to the first polymeric material after the layer has been applied, the doped layer having an outer surface and an inner surface, the inner surface facing the substrate;
- (b) heating the doped layer and forming an organosilicon-rich layer on the outer surface of the doped layer;
- (c) following heating converting the organosilicon-rich layer to a silicon oxide-containing layer;
- (d) forming an added layer over the silicon oxide-containing layer, the added layer comprising either a second polymeric material or a second precursor composition that can be converted to the second polymeric material after the layer has been applied to the silicon oxide-containing layer.
1 more element
A method for reducing the interaction of naturally occurring radiation with an integrated circuit device comprising the steps of:
- (a) providing an integrated circuit substrate;
- (b) forming a doped layer over the substrate, the doped layer comprising a mixture of (1) an organo-silicon compound and (2) either a first polymeric material or a first precursor composition that can be converted to a first polymeric material after the doped layer has been applied, the doped layer having an outer surface and an inner surface, the inner surface facing the substrate;
- (c) heating the doped layer and forming an organo-silicon-rich layer on the outer surface of the doped layer;
- (d) following heating converting the organo-silicon-rich layer to a silicon oxide-containing layer;
- and
- (e) forming an added layer over the silicon oxide-containing layer, the added layer comprising either a second polymeric material or a second precursor composition that can be converted to the second polymeric material after the added layer has been applied to the silicon oxide-containing layer.
3 more elements
Dependencies are inferred from the claim text.