Method of reducing water spotting and oxide growth on a semiconductor structure

A method of cleaning a semiconductor structure comprising:

• selecting a chemical etching process selected from a group consisting of rinsing said semiconductor structure in an aqueous HF solution, performing an HF dry etch on said semiconductor structure, and performing a polysilicon etch on said semiconductor structure;
• performing said chemical etching process upon said semiconductor structure within an at least substantially enclosed treatment vessel;
• substantially filling said treatment vessel with a gas that is inert to said semiconductor structure and to said treatment vessel;
• providing an inert gas atmosphere inside said treatment vessel;
• rinsing said semiconductor structure with DI water in said inert gas atmosphere;
• submerging said semiconductor structure in a DI water bath in said treatment vessel;
• forming a surface between said DI water bath and said gas;
• forming a liquid layer at said surface formed by said DI water bath surface and gas, said liquid layer comprising at least one of isopropyl alcohol and an anhydrous organic volatile liquid conveyed to said treatment vessel in an inert gas carrier;
• and
• separating said semiconductor structure from said DI water bath such that substantially all of said semiconductor structure passes through said liquid layer.

A method of cleaning a semiconductor structure comprising:

• performing a chemical reaction wet etching upon said semiconductor structure within a single compartment of an at least substantially enclosed vessel;
• purging the single compartment of said vessel with a gas;
• forming an inert gas atmosphere in said single compartment of said vessel, said gas forming said inert gas atmosphere being inert to said semiconductor structure and to said vessel;
• contacting said semiconductor structure with DI water;
• removing from said semiconductor structure chemicals from said chemical reaction wet etching;
• maintaining said inert gas atmosphere in said single compartment of said vessel;
• filling said single compartment of said vessel using said DI water;
• submerging said semiconductor structure in said single compartment of said vessel;
• contacting said DI water with said inert gas atmosphere;
• providing an anhydrous volatile organic vapor selected from a group consisting of acetone, chloroform, methanol, carbon tetrachloride, benzene, ethanol, ethyl acetate, hexane, 1-propanol, and 2-propanol, and wherein said anhydrous volatile organic vapor contacts a surface of said DI water to form a layer of an anhydrous volatile organic liquid thereon, said providing an anhydrous volatile organic vapor selected from a group consisting of acetone, chloroform, methanol, carbon tetrachloride, benzene, ethanol, ethyl acetate, hexane, 1-propanol, and 2-propanol, said anhydrous volatile organic vapor conveyed to said vessel in a gas carrier;
• displacing said inert gas atmosphere with said anhydrous volatile organic vapor, said anhydrous volatile organic vapor contacting said surface of said DI water;
• forming a layer of said anhydrous volatile organic liquid upon contact of said surface of said DI water by said anhydrous volatile organic vapor;
• and
• drawing said semiconductor structure out of said DI water through said layer of said anhydrous volatile organic liquid substantially all of said semiconductor structure contacting said layer of said anhydrous volatile organic liquid.