Method of manufacturing semiconductor wafer method of using and utilizing the same

A process for manufacturing a semiconductor wafer, comprising the steps of:

• preparing a first member which has a semiconductor layer on a p-type semiconductor substrate with a separation layer arranged therebetween, the surface of said p-type semiconductor substrate opposite to said semiconductor layer being covered with a back shield;
• separating said first member at said separation layer;
• and
• conducting epitaxial growth of a low concentration p-type semiconductor layer on the surface, on which said semiconductor layer had been provided, of said p-type semiconductor substrate having the back shield, said low concentration p-type semiconductor layer having an impurity concentration, which defines p-type conductivity, lower than that of said p-type semiconductor substrate.

A process for manufacturing a semiconductor wafer, comprising the steps of:

• forming a separation layer within a p-type semiconductor substrate to form a first member which has a semiconductor layer on said separation layer, the surface of said p-type semiconductor substrate opposite to said semiconductor layer being covered with a back shield;
• separating said semiconductor layer through said separation layer to transfer the semiconductor layer onto a second member, thereby forming a first semiconductor wafer;
• and
• conducting epitaxial growth of a low concentration p-type semiconductor layer on the surface on which the semiconductor layer had been provided, of said p-type semiconductor substrate having the back shield, said low concentration p-type semiconductor layer having an impurity concentration, which defines p-type conductivity, lower than that of said p-type semiconductor substrate.

A process for manufacturing a semiconductor wafer, comprising the steps of:

• preparing a first member which has at least a first semiconductor layer comprising an epitaxial semiconductor layer having an impurity concentration, which defines p-type conductivity, lower than that of a p-type semiconductor substrate, a separation layer, and a second semiconductor layer, arranged on said p-type semiconductor substrate in the order as mentioned;
• forming a first semiconductor wafer via transferring said second semiconductor layer onto a second member through the separation step of separating said second semiconductor layer at said separation layer;
• and
• forming a second semiconductor wafer having said first semiconductor layer on said p-type semiconductor substrate by hydrogen annealing the first semiconductor layer remaining on said p-type semiconductor substrate.

A process for manufacturing a semiconductor wafer, comprising the steps of:

• forming at least a first semiconductor layer comprising an epitaxial semiconductor layer having an impurity concentration, which defines p-type conductivity, lower than that of a p-type semiconductor substrate, and a second semiconductor layer comprising an epitaxial semiconductor layer having an impurity concentration, which defines p-type conductivity, higher than that of said first semiconductor layer, arranged on said p-type semiconductor substrate in the order as mentioned, making said second semiconductor layer and part of said first semiconductor layer porous, and forming a third semiconductor layer onto said second semiconductor layer made porous, thereby forming a first member;
• transferring said third semiconductor layer onto said second member to form a first semiconductor wafer;
• and
• forming a second semiconductor wafer comprising said p-type semiconductor substrate having said first semiconductor layer by hydrogen annealing said first semiconductor layer remaining on said p-type semiconductor substrate.

A process for manufacturing a semiconductor wafer, comprising the steps of:

• preparing a semiconductor member which has a semiconductor layer on a p-type semiconductor substrate with a separation layer arranged therebetween, the back surface of said p-type semiconductor substrate opposite to said separation layer and the surface of said semiconductor layer each being covered with an oxide film;
• separating said semiconductor member at said separation layer;
• and
• conducting epitaxial growth of a low concentration p-type semiconductor layer on the surface, on which said separation layer had been provided, of said p-type semiconductor substrate having said oxide film on the back side thereof, said low concentration p-type semiconductor layer having an impurity concentration, which defines p-type conductivity, lower than that of said p-type semiconductor substrate.