Silica-based slurry
AssigneePPG Industries Ohio, Inc.
InventorsStuart D. Hellring, Colin P. McCann, Charles F. Kahle, Yuzhuo Li, Jason Keleher
Life of this patent
Estimating the term…
Abstract
This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.
Claims29
A slurry for polishing a microelectronic substrate, said slurry comprising surface-modified silica wherein said surface-modified silica comprises silica comprising an aggregate of primary particles, said aggregate having a size of less than five (5) microns, and wherein said silica has a hydroxyl content of 7 or greater hydroxyls per nanometer squared of surface area.
A slurry for removal of copper, tantalum and silicon dioxide from a microelectronic substrate, said slurry comprising surface-modified silica and wherein said surface-modified silica further comprises a silica comprising a hydroxyl content of 7 or greater hydroxyls per nanometer squared of surface area.
A slurry for removal of copper, tantalum and silicon dioxide from a microelectronic substrate, said slurry comprising surface-modified silica, wherein removal rate of tantalum increases essentially non-linearly as polishing pressure increases at essentially constant velocity and wherein said surface-modified silica further comprises a silica comprising a hydroxyl content of 7 or greater hydroxyls per nanometer squared of surface area.
A slurry for removing at least one material chosen from copper, tantalum and silicon dioxide, from a microelectronic substrate, said slurry comprising silica modified by a chemical moiety, to produce a non-Prestonian removal rate and wherein said silica further comprises a hydroxyl content of 7 or greater hydroxyls per nanometer squared of surface area.
A method for polishing a microelectronic substrate comprising applying to said substrate a slurry comprising surface-modified silica wherein said surface-modified silica comprises silica comprising an aggregate of primary particles, said aggregate having a size of less than five (5) microns, and wherein said silica has a hydroxyl content of 7 or greater hydroxyls per nanometer squared of surface area.
Dependencies are inferred from the claim text.