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US 6,655,767 B2Granted
Active matrix display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Shunpei Yamazaki, Yasuhiko Takemura
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Abstract
An active matrix display device with a semiconductor layer, an organic layer above the semiconductor layer and a pixel electrode and a conductor layer thereon connected to the source/drain region(s).
Claims61
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region;
- a gate insulating film adjacent to said channel formation region;
- a gate electrode adjacent to said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a pixel electrode formed on said insulating film comprising the organic resin, said pixel electrode electrically connected to one of said first and second impurity regions;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer electrically connected to the other one of the first and second impurity regions.
4 more elements
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region formed on an insulating surface;
- a gate insulating film formed on said channel formation region;
- a gate electrode formed on said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a pixel electrode formed on said insulating film comprising the organic region, said pixel electrode electrically connected to one of said first and second impurity regions;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer electrically connected to the other one of the first and second impurity regions.
4 more elements
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region formed on an insulating surface;
- a gate insulating film adjacent to said channel formation region;
- a gate electrode adjacent to said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a transparent pixel electrode formed on said insulating film comprising the organic resin, said transparent pixel electrode electrically connected to one of said first and second impurity regions;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer electrically connected to the other one of the first and second impurity regions.
4 more elements
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region formed on an insulating surface;
- a gate insulating film formed on said channel formation region;
- a gate electrode formed on said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a transparent pixel electrode formed on said insulating film comprising the organic resin, said transparent pixel electrode electrically connected to one of said first and second impurity regions;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer electrically connected to the other one of the first and second impurity regions.
4 more elements
An active matrix display device comprising:
- a glass substrate;
- a blocking film formed on said glass substrate for blocking sodium;
- an underlying layer comprising silicon oxide formed on said blocking film;
- a semiconductor layer having at least first and second impurity regions and a channel formation region formed on said underlying layer;
- a gate insulating film formed on said channel formation region;
- a gate electrode formed on said gate insulating film;
- an insulating film comprising an organic resin formed over said substrate, said semiconductor layer, said gate insulating film and said gate electrode;
- a pixel electrode formed on said insulating film comprising the organic resin, said pixel electrode electrically connected to one of said first and second impurity regions, and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer electrically connected to the other one of the first and second impurity regions.
6 more elements
An active matrix display device comprising:
- a glass substrate;
- a blocking film formed on said glass substrate for blocking sodium;
- an underlying layer comprising silicon oxide formed on said blocking film;
- a semiconductor layer having at least first and second impurity regions and a channel formation region formed on said underlying layer;
- a gate insulating film formed on said channel formation region;
- a gate electrode formed on said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a transparent pixel electrode formed on said insulating film comprising the organic resin, said transparent electrode electrically connected to one of said first and second impurity regions;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer electrically connected to one of the first and second impurity regions.
7 more elements
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region;
- a gate insulating film adjacent to said channel formation region;
- a gate electrode adjacent to said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a metal electrode formed on said insulating film comprising the organic resin, said metal electrode connected to one of said first and second impurity regions;
- a pixel electrode formed on said insulating film comprising the organic resin, said pixel electrode electrically connected to said one of said first and second impurity regions through said metal electrode;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer connected to the other one of said first and second impurity regions, wherein said metal electrode comprises a same material as said conductive layer.
5 more elements
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region;
- a gate insulating film adjacent to said channel formation region;
- a gate electrode adjacent to said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a metal electrode formed on said insulating film comprising the organic resin, said metal electrode connected to one of said first and second impurity regions;
- a transparent pixel electrode formed on said insulating film comprising the organic resin, said transparent pixel electrode electrically connected to said one of said first and second impurity regions through said metal electrode;
- and
- a conductive layer formed on said insulating film comprising the organic resin, said conductive layer connected to the other one of said first and second impurity regions, wherein said metal electrode comprises a same material as said conductive layer.
5 more elements
An active matrix display device comprising:
- a semiconductor layer having at least first and second impurity regions and a channel formation region;
- a gate insulating film adjacent to said channel formation region;
- a gate electrode adjacent to said gate insulating film;
- an insulating film comprising an organic resin formed over said semiconductor layer, said gate insulating film and said gate electrode;
- a metal electrode formed on said insulating film comprising the organic resin, said metal electrode connected to one of said first and second impurity regions;
- a transparent pixel electrode formed on said insulating film comprising the organic resin, said transparent pixel electrode electrically connected to said one of said first and second impurity regions through said metal electrode wherein a part of said transparent pixel electrode is located below a part of said metal electrode;
- and
- a conductive layer formed on said insulating film comprising the organic resin and connected to the other one of said first and second impurity regions, wherein said metal electrode comprises a same material as said conductive layer.
5 more elements
Dependencies are inferred from the claim text.