Semiconductor device and production method thereof
AssigneeFuji Xerox Co., Ltd.
InventorsYoshihisa Yamazaki, Yoshiyuki Ono, Hokuto Takada, Katsuhiro Sato, Akira Imai, Hidekazu Hirose
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Abstract
A semiconductor device having laminated successively a porous semiconductor layer, an inorganic semiconductor layer, and optionally an organic substance layer formed therebetween is disclosed. The semiconductor device is produced by immersing a porous semiconductor layer or a semiconductor layer having an organic substance layer on the surface thereof in a solution containing the elements constituting an inorganic semiconductor or compounds of the elements and forming the inorganic semiconductor layer on the porous semiconductor layer or the organic substance layer in the solution.
Claims14
A semiconductor device comprising:
- a porous semiconductor layer,
- an inorganic semiconductor layer formed thereon, and
- an organic substance layer formed between the porous semiconductor layer and the inorganic semiconductor layer,
- wherein the organic substance is adsorbed onto the porous semiconductor layer, and
- wherein the porous semiconductor is an N-type semiconductor or a P-type semiconductor, and the inorganic semiconductor is the other type of semiconductor.
A semiconductor device comprising two inorganic semiconductor layers and an organic monomolecular layer formed therebetween, wherein one of the two inorganic semiconductors is an N-type semiconductor and the other inorganic semiconductor is a P-type semiconductor and wherein the organic monomolecular layer is adsorbed onto one of the two inorganic semiconductors.
Dependencies are inferred from the claim text.