Methods for providing void-free layers for semiconductor assemblies
AssigneeTessera, Inc.
InventorsThomas H. DiStefano, Joseph Fjelstad
Life of this patent
Estimating the term…
Abstract
A method of treating an interposer layer includes disposing an interposer layer between a semiconductor wafer and a substrate so that voids within the interposer layer are sealed and applying pressure to substantially eliminate the voids. A method of creating a substantially void-free interposer layer includes injecting the interposer layer between a wafer and a substrate and applying pressure to substantially remove the voids.
Claims22
A method of treating an interposer layer for a semiconductor package assembly to provide a substantially void free interposer layer, comprising:
- disposing a sheet-like, compliant interposer layer between a face surface of a semiconductor chip and a surface of a substrate such that voids within or at the boundaries of the interposer layer are sealed within the assembly, wherein the substrate is rigid;
- and
- applying pressure to the assembly wherein the voids in the interposer layer are substantially eliminated.
A method of creating a void-free interposer layer for a microelectronic component, comprising:
- injecting an interposer layer into a gap between a microelectronic component and a sheet-like substrate such that voids within or at the boundaries of the interposer are sealed within the gap, wherein the substrate is rigid;
- and
- applying pressure wherein the voids in the interposer layer are substantially eliminated.
A method of treating an interposer layer for a semiconductor wafer assembly to provide a substantially void free interposer layer, comprising:
- disposing a sheet-like, compliant interposer layer between a face surface of a semiconductor wafer and a surface of a substrate such that voids within or at the boundaries of the interposer layer are sealed within the assembly, wherein the substrate is rigid;
- and
- applying pressure to the assembly such that the voids in the interposer layer are substantially eliminated.
A method of creating a substantially void-free interposer layer for a semiconductor wafer having a plurality of microelectronic components, comprising:
- injecting an interposer layer into a gap between the wafer and a sheet-like substrate such that voids within or at the boundaries of the interposer layer are sealed within the gap;
- and
- applying pressure such that the voids in the interposer layer are substantially eliminated.
Dependencies are inferred from the claim text.