Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasahiro Kito, Masato Ishino
Life of this patent
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Abstract
A semiconductor laser element including: a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, where refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer; and an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power.
Claims28
A semiconductor laser element comprising:
- a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, wherein refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer;
- a high-resistant substrate which has a substantially higher resistance than the three-dimensional photonic crystal structure which is disposed thereon;
- an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure;
- and
- an electrode unit which is disposed in the three-dimensional photonic crystal structure, wherein
- an area between the electrode unit and the active unit in the three-dimensional photonic crystal structure functions as a conduction path over which electric current is supplied from the electrode unit to the active unit.
A semiconductor laser element comprising:
- a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, wherein refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer,
- the first index changing layer comprises a plurality of spaced optically refractive elongated stripes arranged parallel to each other with a first predetermined pitch so that a refractive index of light periodically changes in the first direction and the second index changing layer comprises a plurality of spaced optically refracting elongated stripes arranged parallel to each other with a second predetermined pitch different than the first pitch so that a refractive index of light periodically changes in a second direction;
- and
- an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power, the active unit has a stack of first index changing and second index changing layers above and below the active unit.
A semiconductor laser element comprising:
- a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, wherein refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer,
- the first index changing layer comprises a plurality of spaced optically refractive straight elongated stripes arranged parallel to each other with a first predetermined pitch so that a refractive index of light periodically changes in the first direction and the second index changing layer comprises a plurality of spaced optically refracting straight elongated stripes arranged parallel to each other with a second predetermined pitch different than the first pitch so that a refractive index of light periodically changes in a second direction;
- and
- an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power, the active unit has a stack of first index changing and second index changing layers above and below the active unit with the first index changing layer straight elongated stripes crossing the second index changing layer straight elongated stripes.
Dependencies are inferred from the claim text.