Compact analog-multiplexed global sense amplifier for rams

A method for writing data to a RAM having a plurality of local bit lines and a plurality of global bit lines comprising:

• coupling a local bit line of the plurality of local bit lines to a respective global bit line of the plurality of global bit lines;
• selecting a local bit line of the plurality of local bit lines and a respective global bit line of the plurality of global bit lines during the writing data;
• and
• coupling non-selected global bit lines to a vdd signal during the writing data.

A RAM with differential local sensing means comprising:

• an odd block of data cells including a plurality of data cell subsets, wherein each of the data cell subsets is coupled to a respective odd bit line;
• an even block of data cells including a plurality of data cell subsets, wherein each of the data cell subsets is coupled to a respective even bit line;
• and
• a plurality of local sense amplifiers positioned between the odd block of data cells and the even block of data cells,
• wherein each local sense amplifier of the plurality of local sense amplifiers is shared by a respective odd bit line, a respective even bit line, and a respective global bit line, and comprises of:
• four transistors configured as two cross-coupled latches having a first output and a second output;
• a first gate transistor for coupling the first output of the two cross-coupled latches to the respective global bit line;
• and
• a second gate transistor for coupling the second output of the two cross-coupled latches to a complement signal of the respective global bit line.