System and method for enabling chip level erasing and writing for magnetic random access memory devices

A method for forming a magnetoresistive random access memory (MRAM) device, comprising:

• forming an MRAM memory array having a plurality of MRAM memory cells arranged in rows and columns of memory cells, each MRAM memory cell capable of sustaining a local magnetic field;
• and
• providing an electromagnetic device proximate to the MRAM memory array and having a controllable variable magnetic field having magnetic poles oriented in a plane parallel with a plane containing the MRAM memory array and further having a longitudinal axis oriented at an angle relative to the orientation of the rows of memory cells to affect the local magnetic field sustained by the plurality of MRAM memory cells.

A method for operating a magnetoresistive random access memory (MRAM) device having an array of MRAM memory cells, each cell having a magnetically susceptible element capable of sustaining a local magnetic field, the method comprising:

• generating a magnetic field oriented with respect to the array of MRAM memory cells to simultaneously affect the local magnetic field sustained by a plurality of the MRAM memory cells;
• and
• adjusting the magnitude of the magnetic field to a magnitude sufficient to change the local magnetic field of a plurality of MRAM memory cells of the array.

A method for operating a magnetoresistive random access memory (MRAM) device having an array of MRAM memory cells, each cell having a magnetically susceptible element capable of sustaining a local magnetic field, the method comprising:

• generating a magnetic field having poles oriented in a plane parallel with a plane containing the array of MRAM memory cells to simultaneously affect the local magnetic field sustained by a plurality of the MRAM memory cells;
• and
• adjusting the magnitude of the magnetic field to polarize the local magnetic field of the MRAM memory cells of the array to a desired polarity.

A method for operating a magnetoresistive random access memory (MRAM) device having an array of MRAM memory cells, each cell having a magnetically susceptible element capable of sustaining a local magnetic field, the method comprising:

• generating a magnetic field having poles oriented in a plane parallel with a plane containing the array of MRAM memory cells to simultaneously affect the local magnetic field sustained by a plurality of the MRAM memory cells;
• and
• varying and successively reducing the magnetic field to erase the local magnetic field sustained by the MRAM memory cells of the array.

A method for operating a magnetoresistive random access memory (MRAM) device having an array of MRAM memory cells, each cell having a magnetically susceptible element capable of sustaining a local magnetic field, the method comprising:

• generating a magnetic field having poles oriented in a plane parallel with a plane containing the array of MRAM memory cells to affect the local magnetic field sustained by the MRAM memory cells;
• adjusting the magnitude of the magnetic field to a non-zero magnitude sufficient to polarize a plurality of the MRAM memory cells of the array.

A method for operating a magnetoresistive random access memory (MRAM) device having an array of MRAM memory cells arranged along row lines and column lines, each cell having a magnetically susceptible element capable of sustaining a local magnetic field, the method comprising:

• generating a magnetic field having poles oriented in a plane parallel with a plane containing the array of MRAM memory cells to affect the local magnetic field sustained by the MRAM memory cells;
• and
• varying and successively reducing the magnetic field to erase any local magnetic field sustained by the row lines and column lines.