System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device

Abstract

A system and method for determining the logic state of a memory cell in a magnetic tunnel junction (MTJ) memory device based on the ratio of the current through the cell at different bias points are disclosed. A memory cell in an MJT memory device is sequentially subjected to at least two different bias voltages. The current through the cell at each of the bias voltages is measured, and a ratio of the different currents is determined. The ratio is then compared with a predetermined value to determine the logic state of the cell. The predetermined value can be a known value. Alternatively, the predetermined value can be determined by application of the system and method to a reference cell having a known logic state.

Dependencies are inferred from the claim text.