Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro Tanaka
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro Tanaka
Estimating the term…
Energy of a laser beam with which a non-single crystalline semiconductor film is irradiated to be annealed is uniformly distributed. The laser beam is obtained from a solid-state laser such as a YAG laser which can easily cause interference in an optical system based on the conventional method of simply dividing and combining laser beams, but which can be maintained easily at a low cost in comparison with excimer lasers. A solid-state laser can oscillate to form a laser beam by aligning planes of polarization. Two laser beams having polarization directions independent of each other are formed by using a λ/2 plate, and a plurality of laser beams are further formed by a stepped quartz block to travel over different optical path lengths. These laser beams are combined into one on or in the vicinity or an irradiation plane by an optical system, thereby forming a uniform laser beam in which interference is effectively limited and the uniformity of energy distribution is high.
A method of processing a laser beam, the method comprising:
A method of processing a laser beam, the method comprising:
A method of processing a linear laser beam, the method comprising:
A method according to 17, wherein forming the plurality of laser beams having optical path lengths different from each other comprises using at least a block having a high transmittance with respect to a linear laser beam.
A method of processing a laser beam, the method comprising:
A method of processing a linear laser beam, the method comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus for forming a linear laser beam distributed along or in the vicinity of an irradiation plane, said apparatus comprising:
A laser irradiation apparatus comprising:
A laser irradiation apparatus for forming a linear laser beam distributed along or in the vicinity of an irradiation plane, said apparatus comprising:
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.