Parallel spiral stacked inductor on semiconductor material
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsChoon-Beng Sia, Kiat Seng Yeo, Toe Naing Swe, Cheng Yeow Ng, Alex See
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Abstract
A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.
Claims18
A method of manufacturing a parallel stacked inductor comprising:
- providing a substrate;
- forming a first conductive material layer over the substrate;
- processing the first conductive material layer to form a first turn;
- forming a first dielectric layer over the substrate and the first turn;
- forming first and second via openings in the first dielectric layer connected to only to distal ends of the first turn;
- forming a second conductive material layer over the first dielectric layer and in the first and second via openings;
- processing the second conductive material layer to form a second turn connected only to the distal ends of the first turn by the second conductive material in the first and second via openings forming first and second vias therebetween;
- and
- forming a second dielectric layer over the first dielectric layer and the second turn.
A method of manufacturing a parallel spiral stacked inductor comprising:
- providing a substrate;
- forming a first conductive material layer over the substrate;
- processing the first conductive material layer to form a first plurality of turns, the first plurality of turns having a center proximate and a center distal ends;
- forming a first dielectric layer over the substrate and the first plurality of turns;
- forming first and second via openings in the first dielectric layer respectively connected to only to the center proximate and center distal ends of the first plurality of turns;
- forming a second conductive material layer over the first dielectric layer and in the first and second via openings;
- processing the second conductive material layer to form a second plurality of turns connected only to the center proximate and center distal ends of the first plurality of turns by the second conductive material in the first and second via openings forming first and second vias therebetween;
- and
- forming a second dielectric layer over the first dielectric layer and the second plurality of turns.
A parallel stacked inductor comprising:
- a substrate;
- a plurality of turns in a plurality of levels, the plurality of turns having distal ends;
- a plurality of vias connecting the distal ends of the plurality of turns;
- a first connecting portion connected to one of the distal ends of the plurality of turns in the level proximate the substrate;
- a second connecting portion connected to the other of the distal ends of the plurality of turns;
- and
- a dielectric material containing the first and second connecting portions and the plurality of turns.
A parallel spiral stacked inductor comprising:
- a substrate;
- a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends;
- a first plurality of vias connecting the center proximate ends of the plurality of turns;
- a second plurality of vias connecting the center distal ends of the plurality of turns;
- a first connecting portion connected to the center proximate ends of the plurality of turns;
- a second connecting portion connected to the center distal end of the plurality of turns;
- and
- a dielectric material containing the first and second connecting portions, the plurality of turns, and the first and second plurality of vias.
A parallel stacked inductor comprising:
- a substrate;
- a first turn of conductive material over the substrate;
- a first dielectric layer over the substrate and the first turn;
- a second turn of conductive material over the first dielectric layer;
- first and second vias of conductive material connected only to the distal ends of the first turn;
- and
- a second dielectric layer over the first dielectric layer and the second turn.
A parallel spiral stacked inductor comprising:
- a substrate;
- a first plurality of turns of conductive material over the substrate, the first plurality of turns having a center proximate and a center distal ends;
- a first dielectric layer over the substrate and the first plurality of turns;
- a second plurality of turns of conductive material over the first dielectric layer;
- first and second vias of conductive material respectively connected only to the center proximate and the center distal ends of the first plurality of turns;
- and
- a second dielectric layer over the first dielectric layer and the second plurality of turns.
Dependencies are inferred from the claim text.