High-speed level shifter using zero-threshold MOSFETS
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Tai Wang, Chung-Hui Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Tai Wang, Chung-Hui Chen
Estimating the term…
A new level-shifting circuit is achieved comprising: a first cascaded switch comprising a first NMOS transistor and a first zero threshold NMOS transistor, the second cascaded switch comprises a second NMOS transistor and a second zero threshold NMOS transistor, and the cross-coupled pull-up comprises a first PMOS transistor and a second PMOS transistor. The sources of both of these PMOS transistors are coupled to a high voltage supply. The gate of the second PMOS transistor and the drain of the first PMOS transistor are coupled to the drain of the first zero threshold NMOS transistor to form an inverted output. The gate of the first PMOS transistor and the drain of the second PMOS transistor are coupled to the drain of the second zero threshold NMOS transistor to form a non-inverted output.
A level-shifting circuit comprising:
A level-shifting circuit comprising:
A level-shifting circuit comprising:
A method to level-shift a signal comprising:
Dependencies are inferred from the claim text.