Thin-film EL device, and its fabrication process
AssigneeTDK Corporation
InventorsYukihiko Shirakawa, Masashi Miwa, Katsuto Nagano, Yoshihiko Yano
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AssigneeTDK Corporation
InventorsYukihiko Shirakawa, Masashi Miwa, Katsuto Nagano, Yoshihiko Yano
Estimating the term…
The invention aims to provide, without incurring any cost increase, a thin-film EL device comprising a multilayer dielectric layer formed of a lead-based dielectric material by a solution coating-and-firing process, which has solved problems including light emission luminance drops, luminance variations and changes of light emission luminance with time, thereby achieving high display quality, and a process for the fabrication of the same. The object is accomplished by forming a patterned electrode layer on an electrically insulating substrate and constructing thereon a dielectric layer having a multilayer structure wherein lead-based dielectric layers formed by repeating the solution coating-and-firing process plural times and a non-lead-based, high-permittivity dielectric layer are stacked, the uppermost surface layer of the dielectric layer having a multilayer structure being the non-lead-based, high-permittivity dielectric layer.
A thin-film EL device having at least a structure comprising an electrically insulating substrate, a patterned lower electrode layer stacked on said substrate, and a dielectric layer, a light-emitting layer and an upper electrode layer stacked on said lower electrode layer, at least one of said lower electrode and said upper electrode being a transparent electrode, wherein
Dependencies are inferred from the claim text.