Semiconductor device and method of manufacturing the same

Abstract

A Schottky diode that achieves a predetermined reverse-direction breakdown voltage even if a state of a surface in a vicinity of a Schottky junction interface changes due to a welding of a bonding wire. The semiconductor device having the Schottky junction includes a semiconductor substrate of a first conductivity type. A well region of a second conductivity type is formed in a top surface of the semiconductor substrate. A Schottky electrode is formed on the top surface of the semiconductor substrate. A connecting conductive member is electrically connected to the Schottky electrode. The connecting conductive member is selectively connected to the Schottky electrode above the well region such that a connection surface between the connecting conductive member and the Schottky electrode is not extended above a Schottky junction between the Schottky electrode and the semiconductor substrate of the first conductivity type.

Dependencies are inferred from the claim text.