Temperature sensing system with matched temperature coefficients of expansion

A temperature sensitive system, comprising:

• an operating system which relies upon a temperature sensing capability, and
• a temperature sensitive structure connected to said operating system to provide said temperature sensing capability, said temperature sensitive structure comprising:
• an AlN die,
• an electrically conductive mounting layer on said die, and
• a temperature sensitive device comprising SiC, AlN and/or AlxGa1−xN(x>0.69) on said mounting layer,
• said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±0.06 those of said die and device, said mounting layer comprising a W, WC and/or W2C adhesive layer adhered to said die, and a metallization layer adhered to said adhesive layer and bonded to electrodes on said device, said metallization layer having a thermal coefficient of expansion not greater than about 3.5 times that of said adhesive layer over a temperature range of interest.

A The temperature sensitive system, comprising:

• an operating system which relies upon a temperature sensing capability, and
• a temperature sensitive structure connected to said operating system to provide said temperature sensing capability, said temperature sensitive structure comprising:
• an AlN die,
• an electrically conductive mounting layer on said die, said mounting layer comprising W, WC and/or W2C,
• a temperature sensitive device comprising SiC, AlN and/or AlxGa1−xN(x>0.69) on said mounting layer,
• electrically conductive lead wires electrically connected to said mounting layer and an encapsulation formed from a borosilicate mixture encapsulating said device, mounting layer and a portion of said lead wires,
• said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±0.06 those of said die and device, and
• a cover of the same material as said die extending over said device, mounting layer and a portion of said lead wires, and held to said die by said encapsulation.

A chemical sensor comprising:

• a high temperature structure comprising:
• a die,
• an electrically conductive mounting layer in said die, and
• a chemical sensitive device comprising SiC, AlN and/or AlxGa1−xN(x>0.69) on said mounting layer, said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±0.06 those of said die and device, and
• an operating system which relies upon a chemical sensing capability, said high temperature structure connected to provide said capability to said operating system.

A chemical sensor, comprising:

• a high temperature structure comprising:
• a AlN die,
• an electrically conductive mounting layer on said die, said mounting layer comprising W, WC and/or W2C, and
• a chemical sensitive device comprising SiC, AlN and/or AlxGa1−xN(x>0.69) on said mounting layer, said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±0.06 those of said die and device, and
• an operating system which relies upon a chemical sensing capability, said high temperature structure connected to provide said capability to said operating system,
• said mounting layer comprising a W, WC and/or W2C adhesive layer adhered to said die, and a metallization layer adhered to said adhesive layer and bonded to electrodes on said device, said metallization layer having a thermal coefficient of expansion not greater than about 3.5 times that of said adhesive layer over a temperature range of interest.