Simplified upper electrode contact structure for PIN diode active pixel sensor
AssigneeAgilent Technologies, Inc.
InventorJeremy A. Theil
Life of this patent
Estimating the term…
Abstract
An active pixel sensor having a transparent conductor that directly contacts a conductive element in an interconnection structure to electrically connect the transparent conductor to a pixel sensor bias voltage is provided. The active pixel sensor includes a semiconductor substrate, the interconnection layer, which is formed over the substrate, and a pixel interconnection layer formed over the interconnection layer. Photo sensors that include a pixel electrode, an I-layer, and may include a P-layer are formed over the pixel interconnection layer. The transparent conductor is formed over the photo sensors and the conductive element exposed on the surface of the interconnection layer.
Claims10
An active pixel sensor comprising:
- a semiconductor substrate;
- an interconnection structure adjacent to the substrate and containing a conductive element that passes through the interconnection structure to the substrate;
- a sensor interconnect structure adjacent to the interconnect on structure;
- at least one photo sensor adjacent to the sensor interconnect structure, each photo sensor comprising an individual pixel electrode;
- an intrinsic layer formed over the at least one pixel electrode;
- and
- a conductive contact layer formed over the intrinsic layer, wherein an inner surface of the conductive contact layer is physically and electrically connected to the intrinsic layer, and the inner surface of the conductive contact layer is physically and directly contacting the interconnection structure and conductive element to electrically connect the conductive contact layer to the substrate.
Dependencies are inferred from the claim text.