Insulated-gate semiconductor device for a rectifier

An insulated-gate semiconductor device for a rectifier circuit, comprising:

• a plurality of P-MOS transistors and a plurality of n-MOS transistors formed on a predetermined semiconductor substrate;
• wherein at least two pairs of p-MOS transistors and n-MOS transistors are bridge-connected to form a full-wave rectifier circuit, and alternating-current input applied to a gate in each of the MOS transistors is full-wave rectified by controlling operation of each of the MOS transistors;
• wherein each of the MOS transistors includes a source region, a drain region formed on the semiconductor substrate at a distance from the source region, and a gate electrode formed on the semiconductor substrate with an insulating layer interposed therebetween to form a channel region between the source region and the drain region;
• wherein the drain region and the source region are asymmetrical with respect to the channel region;
• and
• wherein said full-wave rectifier circuit performs full-wave rectification of alternating-current power supplied thereto by inductive coupling with a coil.

An insulated-gate semiconductor device for a rectifier circuit, comprising:

• a plurality of p-MOS transistors and a plurality of n-MOS transistors formed on a predetermined semiconductor substrate;
• wherein at least two pairs of p-MOS transistors and n-MOS transistors are bridqe-connected to form a full-wave rectifier circuit, and alternatina-current input applied to a gate in each of the MOS transistors is full-wave rectified by controlling operation of each of the MOS transistors;
• wherein each of the MOS transistors includes a source region, a drain region formed on the semiconductor substrate at a distance from the source region, and a gate electrode formed on the semiconductor substrate with an insulating layer interposed therebetween to form a channel region between the source region and the drain region;
• wherein said channel region of each of the MOS transistors is disposed to surround the corresponding source region, and the drain region is disposed around the corresponding channel region;
• and
• wherein said full-wave rectifier circuit performs full-wave rectification of alternating-current power supplied thereto by inductive coupling with a coil.