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US 6,649,976 B2Granted
Semiconductor device having metal silicide film and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToshiaki Iwamatsu, Yasuo Inoue, Yasuo Yamaguchi, Tadashi Nishimura
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Abstract
A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.
Claims4
A semiconductor device, comprising:
- an element isolating insulating film formed in a semiconductor layer for surrounding an element forming region;
- a pair of source/drain regions formed in said element forming region, sandwiching a channel region;
- a gate electrode formed on a surface of said channel region with a gate insulating film interposed therebetween;
- a sidewall insulating film formed on and being in contact with a side surface of an outermost edge of said gate electrode in a length direction of said channel region;
- and
- a silicide film formed on surfaces of said source/drain regions;
- wherein
- said gate electrode and said sidewall insulating film extend from an upper region of said element forming region to an upper region of said element isolating insulating film, and
- said silicide film is not formed at least in a region adjacent said sidewall insulating film and said element isolating insulating film, and located outside of said sidewall insulating film.
6 more elements
Dependencies are inferred from the claim text.