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US 6,649,975 B2Granted
Vertical power devices having trench-based electrodes therein
AssigneeSilicon Semiconductor Corporation
InventorBantval Jayant Baliga
Life of this patent
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Abstract
Vertical power devices include a semiconductor substrate having a drift region of first conductivity type therein and first and second stripe-shaped trenches that extend in the semiconductor substrate and define a drift region mesa therebetween. First and second insulated source electrodes are provided in the first and second stripe-shaped trenches, respectively. A UMOSFET, comprising a third trench that is shallower than the first and second stripe-shaped trenches, is provided in the drift region mesa.
Claims8
A UMOSFET, comprising:
- a semiconductor substrate having a drift region of first conductivity type therein;
- a first stripe-shaped trench in said semiconductor substrate;
- an insulated gate electrode in said first stripe-shaped trench;
- a second stripe-shaped trench that extends in said semiconductor substrate in a direction parallel to said first stripe-shaped trench, said second stripe-shaped trench having a depth that is greater than a depth of said first stripe-shaped trench;
- an insulated source electrode in said second stripe-shaped trench;
- a base region of second conductivity type that extends in the drift region and between opposing sidewalls of said first and second stripe-shaped trenches;
- a source region of first conductivity type in said base region;
- and
- a source electrode that extends on said semiconductor substrate and is electrically connected to said source region and to said insulated source electrode.
6 more elements
A UMOSFET, comprising:
- a semiconductor substrate having a drift region of first conductivity type therein;
- first and second trenches that extend in said semiconductor substrate and define a drift region mesa therebetween;
- first and second insulated source electrodes in said first and second trenches, respectively;
- and
- a UMOSFET comprising a third trench that is shallower than said first and second trenches, in the drift region mesa.
2 more elements
Dependencies are inferred from the claim text.