Field-effect controlled semiconductor device having a non-overlapping gate electrode and drift region and its manufacturing method

A method for manufacturing a semiconductor component, the method which comprises:

• providing a semiconductor substrate of a first conductivity type in order to provide a first connection zone;
• forming a layer of a second conductivity type on the semiconductor substrate;
• manufacturing at least one plate-shaped control electrode on the layer of the second conductivity type such that the at least one plate-shaped control electrode is insulated from the layer of the second conductivity type;
• manufacturing a drift zone of the first conductivity type such that, at least in a region of a surface of the layer of the second conductivity type, the drift zone is one of directly and indirectly self-aligned with respect to a first edge of the at least one plate-shaped control electrode and such that the drift zone extends in a vertical direction of a semiconductor body as far as the semiconductor substrate;
• and
• manufacturing a second connection zone of the first conductivity type in the layer of the second conductivity type such that, at least in a region of a surface of the layer of the second conductivity type, the second connection zone is self-aligned with respect to a second edge of the at least one plate-shaped control electrode disposed opposite the first edge.

A method for manufacturing a semiconductor component, the method which comprises:

• providing a semiconductor substrate of a first conductivity type in order to provide a first connection zone;
• applying a layer onto the semiconductor substrate such that the layer has a given conductivity type selected from the group consisting of the first conductivity type and a second conductivity type;
• manufacturing compensation zones in the layer such that the compensation zones have a conductivity type complementary to the given conductivity type of the layer and such that the compensation zones extend as far as the semiconductor substrate;
• manufacturing at least one control electrode on the layer such that the at least one control electrode is insulated from the layer;
• manufacturing a body zone of the second conductivity type in the layer underneath the at least one control electrode;
• manufacturing a second connection zone of the first conductivity type in the body zone such that the second connection zone is one of directly and indirectly self-aligned with respect to a first edge of the at least one control electrode, at least in a region of a surface of the layer;
• and
• manufacturing a self-aligned zone of the first conductivity type in the layer such that the self-aligned zone is self-aligned with respect to a second edge opposite the first edge of the at least one control electrode, at least in a region of a surface of the layer.