Quantum dot of single electron memory device and method for fabricating thereof
AssigneeHynix Semiconductor Inc.
InventorIl-Gweon Kim
Life of this patent
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Abstract
A method for fabricating a quantum dot, which can be used to fabricate a single electron memory device. The method includes forming a first insulation layer on a semiconductor layer, then forming a second insulation layer on the first insulation layer. Next, the second insulation layer is patterned to form an opening to partially expose the upper surface of the first insulation layer. Using the opening in the second insulation layer, a silicon ion is then implanted into the first insulation layer through the opening by using a tilt angle ion implantation method. Finally, the semiconductor layer is treated to re-crystallize the silicon ion implanted into the first insulation layer.
Claims20
A single electron memory device, comprising:
- a semiconductor layer;
- a first insulation layer on an upper surface of the semiconductor layer;
- a second insulation layer on an upper surface of the first insulation layer;
- and
- a recrystallized implanted ion in the first insulation layer.
A quantum dot in an insulating layer, comprising:
- an insulating layer;
- and
- a quantum dot in the insulating layer, wherein the quantum dot comprises a recrystallized implanted ion.
A memory device, comprising:
- a semiconductor substrate;
- an insulating layer formed on an upper surface of the semiconductor substrate;
- a quantum dot formed in the insulating layer;
- and
- a control gate formed on an upper surface of the insulating layer.
Dependencies are inferred from the claim text.