Selective polysilicon stud growth
AssigneeMicron Technology, Inc.
InventorLuan Tran
Life of this patent
Estimating the term…
Abstract
A memory cell having a bit line contact is provided. The memory cell may be a 6F2 memory cell. The bit line contact may have a contact hole bounded by insulating sidewalls, and the contact hole may be partially or completely filled with a doped polysilicon plug. The doped polysilicon plug may have an upper plug surface profile that is substantially free of concavities or substantially convex. Similarly, a storage node contact may comprise a doped polysilicon plug having an upper plug surface profile that is substantially free of concavities or that is substantially convex. Additionally, a semiconductor device having a conductive contact comprising a polysilicon plug may is provided. The plug may contact a capacitor structure.
Claims16
A memory cell defined along first and second orthogonal dimensions wherein:
- said first dimension is characterized by one-half of a bit line contact feature, one word line feature, one word line space feature, and one-half of a field poly line feature;
- said second dimension is characterized by two one-half field oxide features and one active area feature;
- said first and second dimensions define a 6F2 memory cell;
- said active area feature is characterized by a first contact hole bounded by insulating side walls;
- and
- said first contact hole is filled with a first conductively doped polysilicon plug defining a first upper plug surface profile that is substantially free of concavities.
A memory cell defined along first and second orthogonal dimensions wherein:
- said first dimension is characterized by one-half of a bit line contact feature, one word line feature, one word line space feature, and one-half of a field poly line feature;
- said second dimension is characterized by two one-half field oxide features and one active area feature;
- said first and second dimensions define a 6F2 memory cell;
- said bit line contact feature is characterized by a contact hole bounded by insulating side walls;
- and
- said contact hole is partially filled with a conductively doped polysilicon plug defining an upper plug surface profile that is substantially free of concavities.
A memory cell defined along first and second orthogonal dimensions wherein:
- said first dimension is characterized by one-half of a bit line contact feature, one word line feature, one word line space feature, and one-half of a field poly line feature;
- said second dimension is characterized by two one-half field oxide features and one active area feature;
- said first and second dimensions define a 6F2 memory cell;
- said bit line contact feature is characterized by a contact hole bounded by insulating side walls;
- and
- said contact hole is completely filled with a conductively doped polysilicon plug defining an upper plug surface profile that is substantially free of concavities.
Dependencies are inferred from the claim text.