Supporting gate contacts over source region on MOSFET devices

A method for fabricating a robust and reliable MOSFET gate external connection on a semiconductor apparatus, comprising the steps of:

• with a semiconductor wafer having gate and source metallizations and silicon oxide or silicon nitride passivations with contact passivation openings already in place on a first surface of the wafer, cleaning the wafer;
• coating the first surface of the wafer with a first photosensitive insulating layer;
• baking the first photosensitive insulating layer on the wafer;
• exposing and developing the first photosensitive insulating layer to define exposed gate and source contact areas;
• sputtering a first conducting metal onto the first insulating layer and the exposed gate and source contact areas;
• coating the first conducting metal with a first photoresist coating;
• exposing and developing the first photoresist coating to define protected areas for the first conducting metal;
• etching the first conducting metal to leave two or more conducting surface pathways of the first conducting metal leading from the gate contact area to surface areas above the source contact area;
• stripping the first photoresist coating;
• coating the exposed first photosensitive insulating layer and the exposed first conducting metal with a second photosensitive insulating layer;
• baking the second photosensitive insulating layer on the wafer;
• exposing and developing the second photosensitive insulating layer to expose the first conducting metal in the surface areas above the source contact area to create two or more exposed gate pad contacts;
• sputtering a second conducting metal onto the second photosensitive insulating layer and the exposed gate pad contacts;
• coating the second conducting metal with a second photoresist coating;
• exposing and developing the second photoresist coating to define protected areas for the second conducting metal;
• etching the second conducting metal to leave two or more conducting metal areas over the exposed gate pad contacts;
• and
• plating a third conducting metal onto the second conducting metal over the exposed gate pad contacts.

A semiconductor apparatus having a robust and reliable MOSFET gate external connection, comprising:

• a semiconductor body having a first surface and a second surface;
• a source contact area on the first surface of the semiconductor body;
• a drain contact area on the second surface of the semiconductor body;
• a gate contact area on the first surface of the semiconductor body and separate from the source contact area;
• a source contact conducting extension means overlying the source contact area;
• a gate contact conducting extension means overlying the gate contact area;
• a source contact protection means overlying the source contact conducting extension means and having one or more openings exposing a portion of the surface of the source contact conducting extension means;
• a gate contact protection means overlying the gate contact conducting extension means and having one or more openings exposing a portion of the surface of the gate contact conducting extension means;
• a first insulating layer overlying the gate contact protection means, overlying one or more exposed areas of the source contact conducting extension means, and having one or more openings exposing a portion of the surface of the gate contact conducting extension means;
• a first conducting means overlying portions of the first insulating layer overlying the one or more exposed areas of the source contact conducting extension means, and connected to the gate contact conducting extension means via the openings in the first insulating layer;
• a second insulating layer overlying the first conducting means and the first insulating layer and having two or more openings each overlying the source contact conducting extension means wherein each such opening exposes a portion of the surface of the first conducting means;
• a second conducting means having two or more zones each overlying and in contact with one exposed portion of the first conducting means, and each having an outline of size and shape substantially the same as the exposed portion of the outline of the first conducting means;
• and
• a conducting external connection means having two or more zones each overlying and in contact with one exposed portion of the second conducting means overlying an exposed portion of the first conducting means, and each having an outline of size and shape substantially the same as the exposed portion of the outline of the first conducting means.