Synthetic free layer structure for MRAM devices
AssigneeMaxtor Corporation
InventorRalph William Cross
Life of this patent
Estimating the term…
Abstract
An MRAM cell includes a bottom electrode layer, a magnetic reference layer, an insulating layer, a synthetic free layer, and a top electrode layer. The synthetic free layer includes a first magnetic layer, a ruthenium anti-ferromagnetic coupling layer, and a second magnetic layer. The magnetic reference layer and the first and second magnetic layers are fabricated using magnetic materials such as CoFeB, CoFe, or a bilayer of NiFe and CoFe. The first magnetic layer of the synthetic free layer is made thicker than the second magnetic layer of the synthetic free layer for proper operation.
Claims39
An MRAM cell comprising:
- a bottom electrode layer;
- a magnetic reference layer;
- an insulating layer;
- a synthetic free layer including a first magnetic layer, an AF coupling layer, and a second magnetic layer;
- and
- a top electrode layer.
A method of forming an MRAM cell comprising:
- forming a bottom electrode layer;
- forming a magnetic reference layer;
- forming an insulating layer;
- forming a synthetic free layer including a first magnetic layer, an AF coupling layer, and a second magnetic layer;
- and
- forming a top electrode layer.
A synthetic free layer for an MRAM cell comprising:
- a first magnetic layer;
- an AF ruthenium coupling layer;
- and
- a second magnetic layer, wherein the first magnetic layer is thicker than the second magnetic layer.
An MRAM cell comprising:
- a bottom electrode layer;
- a magnetic reference layer;
- a synthetic pinned layer including a pinning layer, a first magnetic layer, a first AF coupling layer, and a second magnetic layer;
- an insulating layer;
- a synthetic free layer including a third magnetic layer, a second AF coupling layer, and a fourth magnetic layer;
- and
- a top electrode layer.
Dependencies are inferred from the claim text.