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US 6,649,959 B2Granted
Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby
AssigneeInternational Business Machines Corporation
InventorsLouis L. Hsu, Li-Kong Wang
Life of this patent
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Abstract
A method of forming a semiconductor device, includes forming at least one conductive island having a predetermined sidewall angle in a conductive substrate, forming a dielectric material over the at least one island, forming a conductive material over the dielectric material, and forming a contact to the conductive material and the at least one island.
Claims21
A semiconductor device, comprising:
- a conductive substrate;
- at least one conductive island having a predetermined sidewall angle formed in said conductive substrate;
- a dielectric material formed over said at least one island;
- a conductive material formed over said dielectric material and at least a majority of said at least one conductive island;
- and
- a first contact connected to said conductive material and a second contact connected to said conductive substrate.
3 more elements
A semiconductor device comprising:
- a conductive substrate comprising at least one conductive island having an angled sidewall;
- a dielectric layer formed over said at least one conductive island,
- a conductive layer formed over said dielectric material and at least a majority of said at least one conductive island;
- and
- a first contact connected to said conductive layer and a second contact connected to said conductive substrate.
2 more elements
A semiconductor capacitor comprising:
- a conductive substrate comprising at least one conductive island having an angled sidewall, said island forming a first plate of said capacitor;
- a dielectric layer formed over said at least one conductive island;
- a conductive layer formed over said dielectric layer and at least a majority of said at least one conductive island, said conductive layer forming a second plate of said capacitor;
- and
- a first contact connected to said conductive layer and a second contact connected to said conductive substrate.
2 more elements
Dependencies are inferred from the claim text.