Solid-state image sensor of a MOS structure
AssigneeKabushiki Kaisha Toshiba
InventorIkuko Inoue
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Abstract
In a MOS type solid-state image sensor having an image pickup area formed at a semiconductor substrate and comprising a two-dimensional array of row and column unit cells including a photoelectric conversion section and signal scanning circuit, a first p well area is provided in a surface portion of an n type silicon substrate and a second p well area is selectively provided in the surface portion of the first p well area and is higher in p type impurity concentration than the first p well area. In the image pickup area, the photoelectric conversion section is formed in the first p well area and the signal scanning circuit section is formed in the second p well area.
Claims5
A metal oxide semiconductor (MOS) type solid-state image sensor comprising:
- an n type semiconductor substrate;
- at least one first p well area provided in a surface portion of the n type semiconductor substrate;
- a plurality of second p well areas selectively provided at a surface portion of the first p well area and having a higher p type impurity concentration than the first p well area;
- at least one third p well area provided in the surface portion of the n type semiconductor substrate and spaced a predetermined distance from the first p well area;
- an image pickup area comprising a two-dimensional array of row and column unit cells having a photoelectric conversion section provided in the first p well area and a signal scanning circuit section in the second p well areas;
- a plurality of signal lines respectively reading out signal charges from the unit cells in the image pickup area;
- and
- a peripheral circuit area formed in the third p well area.
Dependencies are inferred from the claim text.