Group III nitride compound semiconductor light-emitting element

A group III nitride compound semiconductor light-emitting element formed of Group III nitride compound semiconductor layers, comprising:

• a multi-layer comprising a plurality of light-emitting layers;
• a p-type semiconductor layer;
• and
• an n-type semiconductor layer,
• wherein the multi-layer comprises:
• a multiple quantum barrier-well layer comprising:
• a plurality of quantum-barrier-formation barrier layers comprising a Group III nitride compound semiconductor;
• and
• a plurality of quantum-barrier-formation well layers comprising a Group III nitride compound semiconductor, the barrier layers and the well layers being formed alternately and cyclically;
• and
• a plurality of low-energy-band-gap layers which emit light of different wavelengths, the multiple quantum barrier-well layer being provided between the low-energy-band-gap layers, and the multiple quantum barrier-well layer not emitting light.