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US 6,649,570 B2Granted
Buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor
AssigneeNexans
InventorChristian Belouet
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Abstract
A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO2 layer doped with a dopant, and has a superconductive layer of YBCO on said CeO2 layer. The invention is characterized in that the CeO2 layer is a lattice matching layer.
Claims8
A conductor structure comprising:
- a metallic substrate tape over which there is provided at least one buffer layer comprising a CeO2 layer doped with a dopant, and having a superconductive layer of YBCO on said CeO2 layer,
- wherein said at least one buffer layer comprises:
- said doped CeO2 layer which is a lattice matching layer,
- a first layer, between said metallic substrate and said lattice matching layer, being a diffusion barrier against said metallic substrate, and
- a second layer, between said first layer and said lattice matching layer, which is bi-axially textured for transferring its texture to said YBCO layer at a proper deposition temperature, said second layer being an MgO layer having a thickness substantially less than or equal to 10 nm,
- wherein said YBCO layer has a thickness substantially more than or equal to 1 μm and exhibits high current density values.
3 more elements
Dependencies are inferred from the claim text.