Method for preventing or reducing delamination of deposited insulating layers

A method of forming a layer of silicon dioxide, comprising:

• providing a semiconducting substrate;
• positioning said substrate in a high density plasma process chamber;
• and
• forming a layer of silicon dioxide above said substrate using a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 0.333-0.625 by introducing oxygen at a flowrate ranging from approximately 30-50 sccm and silane at a flowrate ranging from approximately 80-90 sccm into said high density plasma chamber.

A method of forming a layer of silicon dioxide, comprising:

• providing a semiconducting substrate;
• positioning said substrate in a high density plasma process chamber;
• and
• forming a layer of silicon dioxide above said substrate using a high density plasma process comprised of oxygen at a flowrate ranging from approximately 30-50 sccm and silane at a flowrate ranging from approximately 80-90 sccm into said high density plasma chamber.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• and
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio that is less than or equal to 0.625 by introducing oxygen at a flowrate ranging from approximately 30-50 sccm and silane at a flowrate ranging from approximately 80-90 sccm into said high density plasma chamber.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 0.333-0.625 by introducing oxygen at a flowrate ranging from approximately 30-50 sccm and silane at a flowrate ranging from approximately 80-90 sccm into said high density plasma chamber;
• and
• forming a layer of insulating material above said first layer between said conductive interconnections.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 0.333-0.625;
• and
• forming a layer of insulating material comprised of silicon dioxide above said first layer between said conductive interconnections by performing a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 1.444-1.75.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process and introducing oxygen at a flowrate ranging from approximately 30-50 sccm and silane at a flowrate ranging from approximately 80-90 sccm into said high density plasma chamber;
• and
• forming a layer of insulating material above said first layer between said conductive interconnections.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio that is less than or equal to 0.625;
• and
• forming a layer of insulating material comprised of silicon dioxide above said first layer between said conductive interconnections by performing a high density plasma process using oxygen at a flowrate ranging from approximately 130-140 sccm and silane at a flowrate ranging from approximately 80-90 sccm.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio that is less than or equal to 0.625;
• and
• forming a layer of insulating material comprised of silicon dioxide above said first layer between said conductive interconnections by performing a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 1.444-1.75.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 0.333-0.625;
• forming a layer of insulating material above said first layer between said conductive interconnections;
• and
• forming a layer of insulating material comprised of silicon dioxide above said first layer between said conductive interconnections by performing a high density plasma process using oxygen at a flowrate ranging from approximately 130-140 sccm and silane at a flowrate ranging from approximately 80-90 sccm.

A method of forming conductive interconnections above a semiconducting substrate, comprising:

• providing a semiconducting substrate having a partially-formed integrated circuit device formed thereabove, said integrated circuit device having a plurality of conductive interconnections formed thereon;
• positioning said substrate in a high density plasma process chamber;
• forming a first layer of silicon dioxide between said plurality of conductive interconnections using a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 0.333-0.625;
• forming a layer of insulating material above said first layer between said conductive interconnections;
• and
• forming a layer of insulating material comprised of silicon dioxide above said first layer between said conductive interconnections by performing a high density plasma process comprised of an oxygen/silane flowrate ratio ranging from approximately 1.444-1.75.