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US 6,649,537 B1Granted
Intermittent pulsed oxidation process
AssigneeLSI Logic Corporation
InventorsSteven E. Reder, Hemanshu D. Bhatt
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Abstract
The present invention provides a method of forming a dielectric on a semiconductor substrate. A dielectric is grown at a substrate interface in a plurality of increments. Stress is relieved at the dielectric substrate interface between each increment. In another aspect, stress relief is performed by annealing the substrate. The annealing is performed by placing the substrate in an inert environment and by raising the temperature surrounding the substrate.
Claims18
A method of forming a dielectric on a semiconductor substrate, the method comprising:
- growing a dielectric layer on a substrate in a plurality of increments, each of the plurality of increments having a thickness less than the overall thickness of the completed dielectric layer and each increment contributing a portion of the overall thickness;
- and
- relieving stress at the dielectric substrate interface between each increment by annealing.
Dependencies are inferred from the claim text.