Method for fabricating capacitor of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorYoung Il Chen
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Abstract
A method for fabricating a capacitor of a semiconductor device on a semiconductor substrate can includes an insulating film formed on the substrate. A plug is formed in the insulating film, the plug electrically connected with the semiconductor substrate. A lower electrode is formed on the plug and the insulating film adjacent to the plug. A Ta2O5 film is formed on the lower electrode and the insulating film adjacent to the lower electrode. The Ta2O5 film is oxidized by flowing oxygen under the ambient of hydrogen gas at a temperature of between about 800° C. and 850° C. An upper electrode is formed on the Ta2O5 film on the lower electrode and the insulating film adjacent to the lower electrode.
Claims12
A method for fabricating a capacitor of a semiconductor device on a semiconductor substrate, comprising:
- forming an insulating film on the semiconductor substrate;
- forming a plug in the insulating film, the plug electrically connected with the semiconductor substrate;
- forming a lower electrode on the plug and the insulating film adjacent to the plug;
- forming a Ta2O5 film on the lower electrode and the insulating film adjacent to the lower electrode;
- oxidizing the Ta2O5 film by flowing oxygen under the ambient of hydrogen gas at a temperature of between about 800° C. and about 850° C.;
- re-oxidizing the oxidized Ta2O5 film by UV-O3 process;
- and
- forming an upper electrode on the Ta2O5 film on the lower electrode and the insulating film adjacent to the lower electrode.
Dependencies are inferred from the claim text.