Method for ultra-thin gate oxide growth

A method of preparing a semiconductor substrate surface for growth of an ultra-thin silicon dioxide gate insulator layer via a series of wet clean procedures used to remove organic and inorganic material from surface of said semiconductor substrate, and via a high temperature anneal procedure performed in a helium ambient, prior to a thermal oxidation procedure used to remove native oxide formed on surface of said semiconductor substrate during said series of said wet clean procedures, comprising the steps of:

• providing said semiconductor substrate;
• performing a first wet clean procedure in a solution comprised of sulfuric acid—hydrogen peroxide;
• performing a second wet clean procedure in a solution comprised of ammonium hydroxide—hydrogen peroxide—water;
• performing a third wet clean procedure in a solution comprised of hydrochloric acid—hydrogen peroxide—water, with said native oxide formed on surface of said semiconductor substrate during said first wet clean procedure, during said second wet clean procedure, and during said third wet clean procedure;
• performing a drying procedure using isopropyl alcohol;
• performing said high temperature anneal procedure in said helium ambient removing said native oxide from surface of said semiconductor substrate;
• and
• thermally growing said ultra-thin silicon dioxide gate insulator on said surface of said semiconductor substrate.