Methods for processing a coating film and for manufacturing a semiconductor element
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsYasushi Fujii, Atsushi Matsushita
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Abstract
According to the present invention, there is provided a method for processing a coating film, including the steps of forming a silica group coating film having a low dielectric constant on a substrate, etching the silica group coating film through a resist pattern, and processing the silica group coating film with plasma induced from a substantially inactive gas such as helium gas or the like. In this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant can be maintained.
Claims9
A method for processing a coating film comprising the steps of:
- forming a silica group coating film, having a dielectric constant equal to or less than 3.2 on a substrate;
- etching said silica group coating film through a resist pattern;
- processing said etched silica group coating film with plasma induced from a substantially inactive gas;
- and
- conducting an ashing process to said resist pattern.
A method for manufacturing a semiconductor element, comprising the steps of:
- (1) forming a silica group coating film, having a dielectric constant equal to or less than 3.2, on a substrate;
- (2) providing a resist pattern on said silica group coating film;
- (3) etching said silica group coating film using said resist pattern as a mask;
- (4) processing said silica group coating film with plasma induced from a substantially inactive gas;
- and
- (5) conducting an ashing process to said resist pattern with plasma induced from oxygen gas.
Dependencies are inferred from the claim text.