Method of forming film for reduced ohmic contact resistance and ternary phase layer amorphous diffusion barrier

A method for manufacturing a semiconductor device comprising:

• forming an insulating film on a semiconductor substrate;
• selectively removing the insulating film to partially expose a surface of the semiconductor substrate so that a contact hole is formed;
• sequentially forming a first refractory metal and a second refractory metal on an entire surface of the semiconductor substrate including the contact hole;
• forming a silicide film on an interface between the semiconductor substrate of the contact hole region and the first refractory metal;
• and
• reacting the semiconductor substrate of the contact hole region with the first and second refractory metals to form a ternary phase thin film on the silicide film.

A method to produce a semiconductor diffusion prevention device structure, comprising:

• forming a contact hole on a semiconductor substrate;
• forming first and second metal layers on the substrate and in the contact hole;
• forming a silicide layer beneath the contact hole and adjacent to the substrate;
• and
• forming a ternary phase layer on said silicide layer, said ternary phase layer being a Co—Ti—Si layer.

A method to produce a semiconductor device, comprising:

• forming an insulator film on a semiconductor substrate;
• forming a contact hole on said insulator film to expose said substrate;
• forming a silicide layer on said substrate and in said contact hole;
• forming a single layer diffusion prevention barrier on said silicide layer, said diffusion prevention layer being a ternary phase layer of Co—Ti—Si;
• forming a conductive plug on said diffusion prevention layer in said contact hole;
• and
• forming a conducting layer on said plug.

A method to produce a semiconductor diffusion prevention device, comprising:

• forming a contact hole on a semiconductor substrate;
• forming a first metal layer on the substrate, and in the contact hole;
• forming a second metal layer on said first metal layer;
• and
• annealing said first and second metal layers to form a silicide layer beneath the contact hole, and a ternary phase layer on said silicide layer, said ternary phase layer being a Co—Ti—Si layer.

A method to produce a semiconductor diffusion prevention device structure, comprising:

• forming a contact hole on a semiconductor substrate;
• forming first and second metal layers on the substrate and in the contact hole;
• forming a silicide layer beneath the contact hole at an inner face between the substrate and the first metal layer;
• and
• reacting the substrate with the first and second metal layers to form a ternary phase layer on said silicide layer.