Method for improving adhesion of a low k dielectric to a barrier layer
AssigneeSilicon Integrated Systems Corp.
InventorsShyh-Dar Lee, Chen-Chiu Hsue
Life of this patent
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Abstract
A method for improving adhesion of a low k dielectric to a barrier layer. A substrate covered by an insulating layer having copper interconnects is provided. A sealing layer is formed on the copper interconnects and the insulating layer. A plasma treatment is performed on the sealing layer by a reaction gas including at least one of CO2, NH3, NO2, SiH4, trimethylsilane, and tetramethylsilane. A low k dielectric layer is formed on the sealing layer.
Claims18
A method for forming a barrier layer between a low k dielectric and metal interconnects, comprising the steps of:
- providing a substrate covered by an insulating layer having the metal interconnects;
- forming a sealing layer on the metal interconnects and the insulating layer;
- performing a plasma treatment on the sealing layer by a reaction gas including at least one of CO2, NH3, NO2, SiH4, trimethylsilane (3MS), and tetramethylsilane (4MS);
- and
- forming a low k dielectric layer on the sealing layer.
A method for forming a barrier layer between a low k dielectric and metal interconnects, comprising the steps of:
- providing a substrate covered by an insulating layer having the metal interconnects;
- forming a sealing layer on the metal interconnects and the insulating layer;
- forming an adhesion layer on the sealing layer;
- and
- forming a low k dielectric layer on the adhesion layer.
Dependencies are inferred from the claim text.