Semiconductor device including an insulated gate field effect transistor and method of manufacturing the same
AssigneesNEC Corporation, NEC Electronics Corporation
InventorHiroki Koga
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Abstract
A semiconductor device is disclosed including an IGFET (insulated gate field effect transistor) and a method of manufacturing the same. The semiconductor device may include an oxide film (115) or a nitride film (106) provided on a side surface of a gate electrode in such a manner that an overhang condition may not occur. In this way, operating characteristics of the IGFET may not be deteriorated and voids may not appear in filling regions of an interlayer insulating film so that isolation characteristics may not be deteriorated.
Claims9
A method for manufacturing a semiconductor device including an insulated gate field effect transistor (IGFET), comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- forming a laminate film on the gate insulating film, the laminate film including an insulating film formed on a second conductive film formed on a first conductive film;
- etching the insulating film and second conductive film into a predetermined pattern to form a cap layer and an upper layer gate electrode;
- forming a first nitride film, that is a thermal nitride film, on the side surface of the upper layer gate electrode;
- etching the first conductive film using the cap layer, upper layer gate electrode, and the nitride film as a mask to form a lower layer gate electrode;
- forming a first oxide film on the side surface of the lower layer electrode;
- and
- forming an etching stopper film including a second nitride film over the entire surface.
Dependencies are inferred from the claim text.