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US 6,649,499 B2Granted
Method of varying the resistance along a conductive layer
AssigneeLucent Technologies Inc.
InventorAllen Paine Mills, Jr.
Life of this patent
Estimating the term…
Abstract
A method for varying the resistance along a conductive layer. The method including the step of removing at least a portion of a resistance-altering constituent diffused within the conductive layer.
Claims8
A method of making a memory comprising:
- diffusing of a resistance-altering constituent into a plurality of memory cells, the plurality of memory cells comprising polycrystalline silicon and the resistance-altering constituent comprising at least one Group IA element;
- and
- moving at least a portion of a implanted dose of the resistance-altering constituent from the conductive layer of at least one memory cell.
A method comprising:
- diffusing a dose of a resistance-altering constituent into a conductive layer at designated locations;
- and
- writing binary values into a plurality of memory cells formed within the conductive layer by annealing the designated locations with at least one of a first and a second set of parameters.
Dependencies are inferred from the claim text.