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US 6,649,483 B2Granted
Method for fabricating a capacitor configuration
AssigneeInfineon Technologies AG
InventorsWalter Hartner, Volker Weinrich, Matthias Krönke
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Abstract
A method for fabricating a capacitor configuration in particular an FeRAM memory device includes the step of filling intermediate regions, which remain free after the formation of a capacitor device on a surface of a substrate, with at least one electrically insulating intermediate layer. The at least one electrically insulating intermediate layer is filled at least up to a level of a topmost layer of the capacitor device.
Claims38
A method for fabricating a capacitor configuration having at least one capacitor device, the method which comprises:
- providing a substrate having a surface;
- applying a sequence of layers on the substrate by using a 2D patterning process wherein the layers of the sequence of layers respectively are applied in an area-covering manner and subsequently patterned with an etching operation in a common process step;
- forming the layers of the sequence of layers locally on the surface of the substrate at respective given locations such that a capacitor device is provided, thereby leaving exposed free intermediate regions of the surface of the substrate between the locations;
- and
- filling the free intermediate regions of the surface of the substrate with at least one electrically insulating intermediate layer up to a level of a topmost layer of the capacitor device.
2 more elements
Dependencies are inferred from the claim text.