Semiconductor device and method of manufacturing same
AssigneeDenso Corporation
InventorsYoshifumi Okabe, Masami Yamaoka, Akira Kuroyanagi
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Abstract
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
Claims5
A method of manufacturing a power semiconductor device comprising:
- preparing a semiconductor wafer which has a CZ semiconductor substrate doped at an impurity concentration of between 7×1018-1×1021 cm−3, and a semiconductor layer disposed over the semiconductor substrate;
- forming a power semiconductor element at a surface portion of said semiconductor layer;
- forming a first metal layer for a first electrode of said power semiconductor element over said surface portion of said semiconductor layer;
- removing a rear portion of said semiconductor substrate to thin a thickness of said semiconductor substrate and roughen a rear surface of said semiconductor substrate crated after said removing;
- and
- forming on said roughened rear surface a second metal layer for a second electrode of said power semiconductor element.
Dependencies are inferred from the claim text.