Method for fabricating a microelectronic component

A method for fabricating a microelectronic component, the method which comprises:

• forming a storage capacitor on a substrate by providing a first electrode and a second electrode and by providing a dielectric selected from the group consisting of a ferroelectric dielectric and a paraelectric dielectric disposed between the first electrode and the second electrode;
• forming a barrier by producing a silicon oxide layer on the storage capacitor, by subjecting the storage capacitor and at least part of the silicon oxide layer to a heat treatment, and by applying a barrier layer on the silicon oxide layer for protecting against a passage of hydrogen through the barrier;
• and
• forming the silicon oxide layer from a plurality of partial layers, including:
• depositing a first one of the partial layers with a low-temperature process;
• and
• depositing a subsequent one of the partial layers with a high-temperature process.

A method for fabricating a microelectronic component, the method which comprises:

• forming a storage capacitor on a substrate by providing a first electrode and a second electrode and by providing a dielectric selected from the group consisting of a ferroelectric dielectric and a paraelectric dielectric disposed between the first electrode and the second electrode;
• forming a barrier by producing a silicon oxide layer on the storage capacitor, by subjecting the storage capacitor and at least part of the silicon oxide layer to a heat treatment, and by applying a barrier layer on the silicon oxide layer for protecting against a passage of hydrogen through the barrier;
• and
• forming the silicon oxide layer from a plurality of partial layers, including:
• depositing a first one of the partial layers with a low-temperature process;
• and
• depositing a subsequent one of the partial layers with a High Temperature Oxide process.

A method for fabricating a microelectronic component, the method which comprises:

• forming a storage capacitor on a substrate by providing a first electrode and a second electrode and by providing a dielectric selected from the group consisting of a ferroelectric dielectric and a paraelectric dielectric disposed between the first electrode and the second electrode;
• forming a barrier by producing a silicon oxide layer on the storage capacitor, by subjecting the storage capacitor and at least part of the silicon oxide layer to a heat treatment, and by applying a barrier layer on the silicon oxide layer for protecting against a passage of hydrogen through the barrier;
• forming the silicon oxide layer from a plurality of partial layers;
• and
• carrying out the heat treatment of the storage capacitor subsequent to an application of one of the partial layers of the silicon oxide layer.

A method for fabricating a microelectronic component, the method which comprises:

• forming a storage capacitor on a substrate by providing a first electrode and a second electrode and by providing a dielectric selected from the group consisting of a ferroelectric dielectric and a paraelectric dielectric disposed between the first electrode and the second electrode;
• forming a barrier by producing a silicon oxide layer on the storage capacitor, by subjecting the storage capacitor and at least part of the silicon oxide layer to a heat treatment, and by applying a barrier layer on the silicon oxide layer for protecting against a passage of hydrogen through the barrier;
• forming the silicon oxide layer from a plurality of partial layers;
• and
• carrying out the heat treatment of the storage capacitor by performing a heat treatment subsequent to each application of a respective one of the partial layers of the silicon oxide layer.