Method for manufacturing a semiconductor component
AssigneeInfineon Technologies AG
InventorsGerald Deboy, Wolfgang Friza, Oliver Häberlen, Michael Rüb, Helmut Strack
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Abstract
The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.
Claims14
A method for manufacturing a compensation component having a semiconductor element with a blocking pn-type junction, which comprises:
- providing a blocking pn-type junction that is formed by a first zone of a first conduction type and an adjoining zone of a second conduction type that is opposite to the first conduction type;
- connecting the first zone of the first conduction type to a first electrode;
- providing a second zone of the first conduction type and a second electrode that is connected to the second zone of the first conduction type;
- defining a first surface as a side of the zone of the second conduction type that faces the second zone of the first conduction type;
- defining a second surface that lies between the first surface and the second zone of the first conduction type;
- integrating areas of the first conduction type and of the second conduction type together in a region between the first surface and the second surface;
- forming the areas of the first conduction type and of the second conduction type by forming trenches and by doping and filling in the trenches so that:
- charge carriers of the second conduction type predominate in regions formed from portions of the areas of the first conduction type and of the second conduction type that are near the first surface;
- and
- charge carriers of the first conduction type predominate in regions formed from portions of the areas of the first conduction type and of the second conduction type that are near the second surface.
Dependencies are inferred from the claim text.