Methods of forming physical vapor deposition target/backing plate assemblies

A method of forming a PVD target/backing plate assembly, comprising:

• forming a bonding layer on a surface of the PVD target and forming a strong diffusion bond between the bonding layer and the target in less than or equal to about 24 hours at a temperature of less than or equal to about 500° C.;
• the forming the bonding layer comprising coating the bonding layer onto the surface by ion deposition;
• the strong diffusion bond forming during the ion deposition;
• forming a passivating layer on the bonding layer;
• forming a layer of solder on the passivating layer;
• and
• joining a backing plate to the target, the joining the backing plate to the target comprising bonding the backing plate with the solder, the backing plate being joined through a connection that includes at least the bonding layer and accordingly being separated from the PVD target surface by at least the bonding layer.