Method of manufacturing high-power light emitting diodes
AssigneeUnited Epitaxy Company, Ltd.
InventorsKuang-Neng Yang, Chih-Sung Chang, Tzer-Perng Chen
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Abstract
The present invention is related to a method of manufacturing high efficiency LEDs. The LEDs uses a metal reflection layer to solve the problem of light absorption by the substrate, and improves the illumination. It also forms a vertical structure where the P and N ends are on the top and bottom sides of the LEDs, respectively. A vertical structure is easier for final packaging. In addition, the present invention uses a metal substrate to replace the semiconductor substrate in order to improve the heat dissipation, and enable the LEDs to operate at a higher current.
Claims4
A method of manufacturing high efficiency light emitting diodes, comprising the steps of:
- preparing a light emitting double hetero structure formed on a device substrate, said double hetero structure having an upper cladding layer, an active layer and a lower cladding layer stacked on said device substrate;
- coating a plurality of ohmic metal contacts on said upper cladding layer;
- covering said plurality of ohmic metal contacts and said upper cladding layer with a diffusion barrier layer;
- forming a metal reflection layer on said diffusion barrier layer.
- electroplating a metal substrate layer on said metal reflection layer;
- removing said device substrate to expose said lower cladding layer;
- and
- forming at least one ohmic contact electrode on said lower cladding layer.
Dependencies are inferred from the claim text.