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US 6,649,425 B2Granted
Method to reduce leakage during a semi-conductor burn-in procedure
AssigneeSun Microsystems, Inc.
InventorBan P. Wong
Life of this patent
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Abstract
A method for reducing sub-threshold leakage during the burn-in procedure for a semi-conductor is disclosed. The method includes applying a back-bias voltage to the device during the burn-in procedure. The back-bias voltage increases the threshold voltage of the semi-conductor device and consequently, reduces the sub-threshold leakage current.
Claims9
A method for reducing a leakage current during a burn-in procedure for a microprocessor comprising:
- conducting the burn-in procedure, wherein the conducting comprises:
- applying a negative back-bias voltage during the burn-in procedure to a substrate of the microprocessor, wherein the substrate is grounded prior to applying the negative back-bias voltage;
- and
- applying a burn-in stress to the microprocessor.
1 more element
A method for reducing a leakage current during a burn-in procedure for a microprocessor comprising:
- step for conducting the burn-in procedure, wherein the conducting comprises:
- step for applying a burn-in procedure stress to the microprocessor;
- and
- step for applying a negative back-bias voltage during the burn-in procedure to a substrate of the microprocessor, wherein the substrate is grounded prior to applying the negative back-bias voltage.
1 more element
Dependencies are inferred from the claim text.