Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectric

A method for fabricating an integrated semiconductor circuit, which comprises the steps of:

• providing a semiconductor substrate;
• forming an integrated capacitor on the semiconductor substrate, the integrated capacitor having a first electrode, a second electrode, and an electrically insulating layer disposed between the first electrode and the second electrode, the step of forming the integrated capacitor further comprises:
• depositing an electrically insulating material, selected from the group consisting of a dielectric and a ferrroelectric, on an intermediate carrier;
• heating the intermediate carrier with the electrically insulating material for converting the electrically insulating material into a strongly polarizable phase;
• detaching the electrically insulating material from the intermediate carrier;
• comminuting the electrically insulating material into particles;
• and
• applying the particles to the semiconductor substrate for forming the electrically insulating layer of the integrated capacitor.