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US 6,649,423 B2Granted
Method for modifying switching field characteristics of magnetic tunnel junctions
AssigneeHewlett-Packard Development Company, L.P.
InventorsThomas Anthony, Lung Tran, Manish Sharma
Life of this patent
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Abstract
A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.
Claims24
A method comprising:
- forming a magnetic tunnel junction including pinned end sense layers, during which magnetization vectors of the layers are set;
- and
- later re-setting at least one of the magnetization vectors.
A method comprising:
- forming a magnetic tunnel junction Including pinned end sense layers;
- and
- re-setting a magnetization vector of at least one of the layers;
- wherein both the sense layer magnetization vector and the pinned layer magnetization vector are re-set by re-annealing.
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A method comprising:
- forming a magnetic tunnel junction including pinned and sense layers;
- and
- re-setting a magnetization vector of at least one of the layers;
- wherein the pinned layer magnetization vector is re-set to compensate for strong ferromagnetic coupling and weak antiferromagnetic coupling.
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A method comprising:
- forming a magnetic tunnel junction including pinned and sense layers;
- and
- re-setting a magnetization vector of at least one of the layers;
- wherein sense layer magnetization angle is changed independently of pinned layer magnetization angle.
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A method comprising:
- forming a magnetic tunnel junction including pinned and sense layers;
- determining a desired switching curve for the junction;
- and
- re-setting a magnetization vector of at least one of the layers.
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Dependencies are inferred from the claim text.