Nitride film
AssigneeNGK Insulators, Ltd.
InventorsTomohiko Shibata, Yukinori Nakamura, Mitsuhiro Tanaka
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Abstract
A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant “c” of the c-axis of the Group III nitride film and the lattice constant “a” of the crystal face perpendicular to the main surface of the substrate satisfies the relation of “C>2.636a-3.232”.
Claims10
A III nitride film including at least Al and having a hexagonal crystal system which is directly grown on a crystalline substrate along the C-axis, the lattice constant “c” of the c-axis of said film and the lattice constant “a” of the crystal face perpendicular to the main surface of said substrate satisfying the relation of “c>2.636a-3.232”.
A III nitride film including at least Al and having a hexagonal crystal system which is directly grown on a crystalline substrate along the C-axis, the lattice constant “c” of the c-axis of said film and the lattice constant “a” of the crystal face perpendicular to the main surface of said substrate satisfying the relation of “c>2.636a-3.232”, wherein
- the crystalline substrate comprises an epitaxial substrate which is constructed of a given base material and a III nitride underfilm including at least Al.
Dependencies are inferred from the claim text.